EELS data in specular scattering (Q_i = 60°) for an epitaxial K₃ C₆₀ film deposited on Cu (111). The intense gain and loss peaks at 78 cm^-1 energy correspond to the Fuchs-Kliewer modes of the ionic material and are shown more clearly in the expanded scale inset figure. Other modes at 480, 560 and 1410 cm^-1 are mainly C-C bend and stretch modes of the C₆₀ molecule which are shifted by ~ 30 cm^-1 due to the indirect coupling of the K⁺ ions. Note the very high resolution of 1.85 meV.*

Energy loss spectra for a 9° miscut Si(111) surface covered with atomic hydrogen by wet chemical etching. In addition to the Si-H stretch and bend modes at 2084 and 636 cm^-1 there is an intense peak at 910 cm^-1 due to the Si-H₂ scissor mode of the dihydride step atoms. The weak peaks at 1255, 1815, 2560 and 2705 cm^-1 are assigned to overtones and combination bands of Si-H and Si-Si modes. System resolution is 4.7 meV.*

Electron energy loss spectrum of a wet chemically prepared Si (111) surface covered with atomic hydrogen in the atop site in specular scattering at incidence angle, 60°. The peaks at 2084 cm^-1 and 636 cm^-1 correspond to the Si-H stretch and bending modes respectively. Weaker peaks at 520, 790 and 1105 cm^-1 are substrate modes or due to residual contamination from the etching preparation. System resolution is 3.1 meV.*

Electron energy loss spectrum for ordered oxygen adsorption on a copper (110) surface showing the O-Cu stretching mode and energy losses and gains associated with surface phonons. The system resolution is 2.9 meV.**

* Used with permission of Dr. J. E. Rowe, AT&T Bell Laboratories.
**Used with permission of Dr. Arthur P. Baddorf, Oak Ridge National Laboratory.